FDPF10N50FT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

UniFET™

Radiation Hardening :

No

Vgs (Max) :

±30V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.5A, 10V

Drain-source On Resistance-Max :

0.85Ohm

Power Dissipation :

125W

FET Type :

N-Channel

Packaging :

Tube

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

20 ns

Drain to Source Breakdown Voltage :

500V

Rise Time :

40ns

Element Configuration :

Single

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

ECCN Code :

EAR99

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain Current-Max (Abs) (ID) :

9A

Continuous Drain Current (ID) :

9A

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Turn-Off Delay Time :

45 ns

Number of Elements :

1

Weight :

2.27g

Published :

2013

Power Dissipation-Max :

42W Tc

Number of Pins :

3

Fall Time (Typ) :

30 ns

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

1170pF @ 25V

Case Connection :

Isolated

Factory Lead Time :

8 Weeks

JEDEC-95 Code :

TO-220AB