FDPF770N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

10A

Width :

4.9mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

20W

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Length :

10.36mm

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

77m Ω @ 10A, 10V

Drain to Source Breakdown Voltage :

150V

Radiation Hardening :

No

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Turn-Off Delay Time :

15 ns

Rise Time :

8ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Element Configuration :

Single

JESD-609 Code :

e3

Package / Case :

TO-220-3 Full Pack

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

765pF @ 75V

Number of Pins :

3

Series :

PowerTrench®

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.077Ohm

Height :

16.07mm

Weight :

2.27g

Pulsed Drain Current-Max (IDM) :

40A

Fall Time (Typ) :

3 ns

Number of Terminations :

3

Packaging :

Tube

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

11.2nC @ 10V

HTS Code :

8541.29.00.95

Power Dissipation-Max :

21W Tc

RoHS Status :

ROHS3 Compliant