FDPF55N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Series :

UniFET™

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±25V

Factory Lead Time :

5 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Turn On Delay Time :

30 ns

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

95 ns

Continuous Drain Current (ID) :

55A

Packaging :

Tube

Width :

4.9mm

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate to Source Voltage (Vgs) :

25V

Length :

10.36mm

Rise Time :

130ns

Weight :

2.27g

Power Dissipation :

48W

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Mount :

Through Hole

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

22m Ω @ 27.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

55A Tc

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Element Configuration :

Single

Turn-Off Delay Time :

70 ns

Power Dissipation-Max :

48W Tc

Number of Elements :

1

Avalanche Energy Rating (Eas) :

480 mJ

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Drain-source On Resistance-Max :

0.022Ohm

Pulsed Drain Current-Max (IDM) :

220A

Operating Mode :

ENHANCEMENT MODE

Height :

16.07mm

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3