FDPF4N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

28W Tc

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Power Dissipation :

28W

Turn-Off Delay Time :

30.2 ns

FET Type :

N-Channel

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tube

Number of Terminations :

3

Fall Time (Typ) :

12.8 ns

Element Configuration :

Single

Turn On Delay Time :

12.7 ns

Operating Temperature :

-55°C~150°C TJ

Width :

4.9mm

Transistor Element Material :

SILICON

Number of Pins :

3

Continuous Drain Current (ID) :

3.8A

Rise Time :

15.1ns

Weight :

2.27g

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 10V

RoHS Status :

ROHS3 Compliant

Published :

2013

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±25V

JESD-609 Code :

e3

Case Connection :

Isolated

Transistor Application :

SWITCHING

Length :

10.36mm

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.9A, 10V

ECCN Code :

EAR99

Series :

UniFET-II™

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Number of Elements :

1

Height :

16.07mm

Factory Lead Time :

7 Weeks

Drain to Source Breakdown Voltage :

600V