FDPF3860T
- Mfr.Part #
- FDPF3860T
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A TO220F
- Stock
- 1,271
- In Stock :
- 1,271
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Resistance :
- 3.802GOhm
- Package / Case :
- TO-220-3 Full Pack
- Published :
- 2013
- Height :
- 16.07mm
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Rise Time :
- 17ns
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 38.2m Ω @ 5.9A, 10V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Weight :
- 2.27g
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 80A
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 100V
- Fall Time (Typ) :
- 7 ns
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 24 ns
- Turn On Delay Time :
- 15 ns
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Width :
- 4.9mm
- Power Dissipation-Max :
- 33.8W Tc
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- Isolated
- Power Dissipation :
- 33.8W
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 278 mJ
- Continuous Drain Current (ID) :
- 20A
- Length :
- 10.36mm
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 2.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Datasheets
- FDPF3860T

N-Channel Tube 38.2m Ω @ 5.9A, 10V ±20V 1800pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FDPF3860T Description
The FDPF3860T is a 100V N-channel PowerTrench? MOSFET ha ing been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDPF3860T is an optimized power switch combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDPF3860T Features
-
RDS(on) = 29.1m? ( Typ.) @ VGS = 10V, ID = 5.9A
-
Fast switching speed
-
Low Gate Charge
-
High-performance trench technology for extremely low RDS(on)
-
High power and current handling capability
-
RoHS compliant
FDPF3860T Applications
-
Consumer Appliances
-
Synchronous Rectification
-
LCD / LED / PDP TV
-
Micro Solar Inverters
-
Uninterruptible Power Supplies
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