FDPF16N50
- Mfr.Part #
- FDPF16N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 37,529
- In Stock :
- 37,529
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 80 ns
- Continuous Drain Current (ID) :
- 16A
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Drain to Source Breakdown Voltage :
- 500V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Case Connection :
- Isolated
- Factory Lead Time :
- 4 Weeks
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Weight :
- 2.27g
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 38.5W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2004
- Length :
- 10.16mm
- Series :
- UniFET™
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 8A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 38.5W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1945pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 64A
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 65 ns
- Avalanche Energy Rating (Eas) :
- 780 mJ
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Rise Time :
- 150ns
- Contact Plating :
- Tin
- Width :
- 4.7mm
- Number of Pins :
- 3
- Threshold Voltage :
- 5V
- Number of Elements :
- 1
- Turn On Delay Time :
- 40 ns
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Height :
- 15.87mm
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Datasheets
- FDPF16N50

N-Channel Tube 380m Ω @ 8A, 10V ±30V 1945pF @ 25V 45nC @ 10V TO-220-3 Full Pack
FDPF16N50 Description
UniFETTM:MOSFET is a high voltage MOSFET series based on flat stripe and DMOS technology. The MOSFET is designed to reduce on-resistance and provide better switching performance and higher avalanche energy intensity. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX and electronic lamp ballasts.
FDPF16N50 Features
RDS(on) = 380m? ( Max.)@ VGS = 10V, ID = 8.3A
Low gate charge ( Typ. 32nC)
Low Crss ( Typ. 20pF)
100% avalanche tested
FDPF16N50 Applications
This product is general usage and suitable for many different applications.
LCD / LED / PDP TV
Lighting
Uninterruptible Power Supplies
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