FDPF13N50FT
- Mfr.Part #
- FDPF13N50FT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO220F
- Stock
- 4,331
- In Stock :
- 4,331
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 28 ns
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 42W Tc
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rise Time :
- 54ns
- Package / Case :
- TO-220-3 Full Pack
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 540m Ω @ 6A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 4 Weeks
- Height :
- 16.07mm
- Weight :
- 2.27g
- Width :
- 4.9mm
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Published :
- 2013
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 12A
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 48A
- Series :
- UniFET™
- Fall Time (Typ) :
- 47 ns
- Drain-source On Resistance-Max :
- 0.54Ohm
- Power Dissipation :
- 42W
- Length :
- 10.36mm
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 684 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 75 ns
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1930pF @ 25V
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Datasheets
- FDPF13N50FT

N-Channel Tube 540m Ω @ 6A, 10V ±30V 1930pF @ 25V 39nC @ 10V TO-220-3 Full Pack
FDPF13N50FT Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 684 mJ.The maximum input capacitance of this device is 1930pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 28 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FDPF13N50FT Features
the avalanche energy rating (Eas) is 684 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 48A.
FDPF13N50FT Applications
There are a lot of ON Semiconductor
FDPF13N50FT applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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