FDPF12N60NZ

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Vgs (Max) :

±30V

Contact Plating :

Tin

ECCN Code :

EAR99

Element Configuration :

Single

Turn-Off Delay Time :

170 ns

Power Dissipation-Max :

39W Tc

Drain-source On Resistance-Max :

0.65Ohm

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Weight :

2.27g

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Series :

UniFET-II™

Packaging :

Tube

Fall Time (Typ) :

130 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Power Dissipation :

39W

Turn On Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

110ns

JESD-609 Code :

e3

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Avalanche Energy Rating (Eas) :

565 mJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1676pF @ 25V

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

7 Weeks

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Continuous Drain Current (ID) :

12A

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

48A

Mount :

Through Hole

FET Type :

N-Channel