FDMQ8403

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

1.8 ns

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

6A

Weight :

242.3mg

Number of Elements :

4

Terminal Position :

Dual

JESD-609 Code :

e4

Number of Pins :

12

Rds On (Max) @ Id, Vgs :

110m Ω @ 3A, 10V

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

4.1 ns

FET Feature :

Standard

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Package / Case :

12-WDFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

FET Type :

4 N-Channel (H-Bridge)

Length :

5mm

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

Rise Time :

1.2ns

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

215pF @ 15V

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Power Dissipation :

1.9W

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Pbfree Code :

yes

Number of Terminations :

12

Max Power Dissipation :

1.9W

Continuous Drain Current (ID) :

3.1A

Series :

GreenBridge™ PowerTrench®

Turn-Off Delay Time :

7.2 ns

Transistor Application :

SWITCHING

Height :

750μm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Case Connection :

DRAIN SOURCE

Drain to Source Voltage (Vdss) :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.11Ohm

Width :

4.5mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

100V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V