FDML7610S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

3mm

Factory Lead Time :

23 Weeks

Number of Terminations :

6

Turn-Off Delay Time :

31 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerWDFN

Continuous Drain Current (ID) :

17A

Power Dissipation :

2.2W

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Power - Max :

800mW 900mW

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

12A 17A

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

60A

Height :

750μm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Max Power Dissipation :

2.2W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-N6

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Width :

4.5mm

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 12A, 10V

Series :

PowerTrench®

Nominal Vgs :

1.8 V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Feature :

Logic Level Gate

Contact Plating :

Gold

Drain-source On Resistance-Max :

0.0075Ohm

Weight :

300mg

Packaging :

Tape and Reel (TR)