FDMC8200S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

REACH SVHC :

No SVHC

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

6A

Vgs(th) (Max) @ Id :

3V @ 250µA

Feedback Cap-Max (Crss) :

30 pF

Published :

2010

FET Feature :

Logic Level Gate

JESD-609 Code :

e4

Packaging :

Tape and Reel (TR)

Power - Max :

700mW 1W

Number of Elements :

2

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Current - Continuous Drain (Id) @ 25°C :

6A 8.5A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerWDFN

Power Dissipation :

2.5W

Series :

PowerTrench®

Width :

3mm

FET Type :

2 N-Channel (Dual)

Case Connection :

DRAIN SOURCE

ECCN Code :

EAR99

Radiation Hardening :

No

Factory Lead Time :

23 Weeks

Resistance :

20mOhm

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

RoHS Status :

ROHS3 Compliant

Weight :

186mg

Max Power Dissipation :

1W

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Turn-Off Delay Time :

35 ns

Height :

750μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

20m Ω @ 6A, 10V

Mount :

Surface Mount

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

2.3 V

Continuous Drain Current (ID) :

18A

Mounting Type :

Surface Mount

Number of Terminations :

8