FDMC8200
- Mfr.Part #
- FDMC8200
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 8A/12A 8POWER33
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Length :
- 3mm
- Rise Time :
- 4ns
- Height :
- 750μm
- Weight :
- 186mg
- Terminal Form :
- NO LEAD
- Nominal Vgs :
- 2.3 V
- Number of Elements :
- 2
- FET Type :
- 2 N-Channel (Dual)
- Fall Time (Typ) :
- 6 ns
- Drain to Source Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Case Connection :
- DRAIN-SOURCE
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- Width :
- 3mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 6A, 10V
- Pulsed Drain Current-Max (IDM) :
- 40A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Gold
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time-Max (ton) :
- 30ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 15V
- Qualification Status :
- Not Qualified
- Feedback Cap-Max (Crss) :
- 30 pF
- Power - Max :
- 700mW 900mW
- ECCN Code :
- EAR99
- Threshold Voltage :
- 2.3V
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 23 Weeks
- Number of Pins :
- 8
- Power Dissipation :
- 2.2W
- FET Feature :
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C :
- 8A 12A
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 20mOhm
- Package / Case :
- 8-PowerWDFN
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 900mW
- Continuous Drain Current (ID) :
- 8A
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 38 ns
- Element Configuration :
- Dual
- Drain Current-Max (Abs) (ID) :
- 8A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Terminations :
- 8
- Datasheets
- FDMC8200
FDMC8200 Documents
FDMC8200 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMC8200 Description
The device includes two dedicated N-channel MOSFET in a dual Power33 (3 Mm X 3 Mm MLP) package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous MOSFET (Q2) are designed to provide optimal power efficiency.
FDMC8200 Features
Q1: N-Channel
Max. RDS(on) = 20 mΩ at VGS = 10 V, ID = 6A
Max. RDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5A
Q2: N-Channel
Max. RDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9A
Max. RDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7A
RoHS Compliant
FDMC8200 Applications
This product is general usage and suitable for many different applications.
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