FDMC8030

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

7 ns

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

2

Max Power Dissipation :

800mW

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Continuous Drain Current (ID) :

12A

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

40V

Fall Time (Typ) :

3 ns

Power Dissipation :

1.9W

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Feedback Cap-Max (Crss) :

30 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Turn-Off Delay Time :

19 ns

Pulsed Drain Current-Max (IDM) :

50A

Input Capacitance (Ciss) (Max) @ Vds :

1975pF @ 20V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

ECCN Code :

EAR99

Factory Lead Time :

7 Weeks

FET Type :

2 N-Channel (Dual)

Series :

PowerTrench®

Published :

2007

Width :

3mm

Weight :

196mg

Height :

800μm

Threshold Voltage :

1.5V

Number of Pins :

8

Drain to Source Breakdown Voltage :

40V

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Gate to Source Voltage (Vgs) :

12V

Rise Time :

3ns

Transistor Element Material :

SILICON

Element Configuration :

Dual

JESD-609 Code :

e4

Rds On (Max) @ Id, Vgs :

10m Ω @ 12A, 10V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Case Connection :

DRAIN SOURCE

Length :

3mm

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

FET Feature :

Logic Level Gate

Package / Case :

8-PowerWDFN