FDMA8878
- Mfr.Part #
- FDMA8878
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9A/10A 6MICROFET
- Stock
- 34,371
- In Stock :
- 34,371
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 2mm
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 10A Tc
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.4W Ta
- Case Connection :
- DRAIN
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Power Dissipation :
- 2.4W
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 1.8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 720pF @ 15V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Pins :
- 6
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Factory Lead Time :
- 16 Weeks
- Height :
- 725μm
- Feedback Cap-Max (Crss) :
- 35 pF
- Rise Time :
- 2ns
- Lead Free :
- Lead Free
- Nominal Vgs :
- 1.8 V
- JESD-609 Code :
- e4
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 6
- Width :
- 2mm
- Fall Time (Typ) :
- 2 ns
- Package / Case :
- 6-VDFN Exposed Pad
- Published :
- 2008
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 9A, 10V
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Continuous Drain Current (ID) :
- 10A
- Drain to Source Breakdown Voltage :
- 30V
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 6 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Drain Current-Max (Abs) (ID) :
- 9A
- Turn-Off Delay Time :
- 14 ns
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDMA8878

N-Channel Tape & Reel (TR) 16m Ω @ 9A, 10V ±20V 720pF @ 15V 12nC @ 10V 6-VDFN Exposed Pad
FDMA8878 Description
This N-channel MOSFET FDMA8878 is produced using ONSEMI's advanced POWERTRENCH process, which has been optimized for RDS (ON) and switching performance.
FDMA8878 Features
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A
Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A
High performance trench technology for extremely low rDS(on)
Fast switching speed
RoHS Compliant
FDMA8878 Applications
Notebook PC
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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