FDMA520PZ
- Mfr.Part #
- FDMA520PZ
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 7.3A 6MICROFET
- Stock
- 45,459
- In Stock :
- 45,459
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Ta
- Resistance :
- 30mOhm
- Height :
- 750μm
- Dual Supply Voltage :
- -20V
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Continuous Drain Current (ID) :
- 7.3A
- Fall Time (Typ) :
- 74 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1645pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 7.3A, 4.5V
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -20V
- Package / Case :
- 6-VDFN Exposed Pad
- Termination :
- SMD/SMT
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Rise Time :
- 29ns
- Drain to Source Breakdown Voltage :
- -20V
- Length :
- 2mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- NO LEAD
- Pulsed Drain Current-Max (IDM) :
- 24A
- Nominal Vgs :
- -1.1 V
- Current Rating :
- -7.3A
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 12V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- FET Type :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 6
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±12V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Turn-Off Delay Time :
- 83 ns
- Weight :
- 30mg
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e4
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 10 ns
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Width :
- 2mm
- Power Dissipation-Max :
- 2.4W Ta
- Power Dissipation :
- 2.4W
- Datasheets
- FDMA520PZ
FDMA520PZ Documents

P-Channel Tape & Reel (TR) 30m Ω @ 7.3A, 4.5V ±12V 1645pF @ 10V 20nC @ 4.5V 20V 6-VDFN Exposed Pad
FDMA520PZ Description
ON Semiconductor's FDMA520PZ is a P-CH Power Trench MOSFET transistor with a 20V operating voltage. This device was created specifically for charging or exchanging batteries in cellular phones and other ultraportable devices. It includes a low-on-state resistance MOSFET. The MicroFET 2X2 package has excellent thermal performance for its size, making it ideal for linear mode applications.
FDMA520PZ Features
-
Max rDS(on) = 30mΩ at VGS = -4.5V, ID = -7.3A
-
Max rDS(on) = 53mΩ at VGS = -2.5V, ID = -5.5A
-
Low profile–0.8mm maximum–in the new package MicroFET 2X2 mm
-
HBM ESD protection level > 3k V typical (Note 3)
-
Free from halogenated compounds and antimony oxides
-
RoHS compliant
FDMA520PZ Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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