FDG330P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Factory Lead Time :

48 Weeks

RoHS Status :

RoHS Compliant

Height :

1mm

Continuous Drain Current (ID) :

2A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Threshold Voltage :

-700mV

Power Dissipation :

750mW

Current Rating :

-2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

110m Ω @ 2A, 4.5V

Drain to Source Voltage (Vdss) :

12V

Width :

1.25mm

Number of Terminations :

6

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Fall Time (Typ) :

11 ns

Lead Free :

Lead Free

Terminal Position :

Dual

Length :

2mm

Input Capacitance (Ciss) (Max) @ Vds :

477pF @ 6V

Drain Current-Max (Abs) (ID) :

2A

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Rise Time :

11ns

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Series :

PowerTrench®

Weight :

28mg

Current - Continuous Drain (Id) @ 25°C :

2A Ta

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

JESD-609 Code :

e3

Mount :

Surface Mount

Pbfree Code :

yes

Voltage - Rated DC :

-12V

Turn On Delay Time :

10 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-12V

Number of Pins :

6

Vgs (Max) :

±8V

Turn-Off Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Power Dissipation-Max :

750mW Ta

Published :

2001

Gate to Source Voltage (Vgs) :

8V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Element Configuration :

Single