FDG315N

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Mfr.Part #
FDG315N
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET N-CH 30V 2A SC88
Stock
26,003
In Stock :
26,003

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
Threshold Voltage :
1.8V
Mount :
Surface Mount
Package / Case :
6-TSSOP, SC-88, SOT-363
RoHS Status :
ROHS3 Compliant
Height :
1mm
Terminal Position :
Dual
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
2A
FET Type :
N-Channel
Width :
1.25mm
Number of Elements :
1
ECCN Code :
EAR99
Resistance :
120mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Continuous Drain Current (ID) :
2A
Vgs (Max) :
±20V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Turn On Delay Time :
3 ns
Power Dissipation-Max :
750mW Ta
Voltage - Rated DC :
30V
Weight :
28mg
Pbfree Code :
yes
Lead Free :
Lead Free
Terminal Finish :
Tin (Sn)
Number of Pins :
6
Fall Time (Typ) :
11 ns
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 5V
Transistor Application :
SWITCHING
Published :
2000
Rds On (Max) @ Id, Vgs :
120m Ω @ 2A, 10V
Nominal Vgs :
1.8 V
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
30V
Current - Continuous Drain (Id) @ 25°C :
2A Ta
Termination :
SMD/SMT
Rise Time :
11ns
Number of Terminations :
6
Series :
PowerTrench®
Length :
2mm
Factory Lead Time :
10 Weeks
Vgs(th) (Max) @ Id :
3V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
7 ns
Current Rating :
2A
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 15V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation :
750mW
Terminal Form :
Gull wing
Dual Supply Voltage :
30V
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Datasheets
FDG315N
Introducing Transistors - FETs, MOSFETs - Single onsemi FDG315N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:6-TSSOP, SC-88, SOT-363, Number of Pins:6, Mounting Type:Surface Mount, Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, FDG315N pinout, FDG315N datasheet PDF, FDG315N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDG315N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDG315N


N-Channel Tape & Reel (TR) 120m Ω @ 2A, 10V ±20V 220pF @ 15V 4nC @ 5V 6-TSSOP, SC-88, SOT-363

FDG315N Description

Using a PowerTrench process, the FDG315N N-Channel logic level MOSFET is produced to minimize on-state resistance while maintaining superior switching performance.

An FDG315N is ideally suited for battery-powered and low voltage applications with low in-line power loss.


FDG315N Features

  • 2 A, 30 A V

  • Low gate charge (2.1nC typical).

  • RDS(on) = 0.12 Ω @ VGS = 10 V

  • RDS(on) = 0.16 Ω @ VGS = 4.5 V

  • High-performance trench technology for extremely lowRDS(ON).

  • Compact industry standard SC70-6 surface mount package.


FDG315N Applications

  • load switch

  • dc/dc converter

  • power management


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