FDG312P

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Mfr.Part #
FDG312P
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET P-CH 20V 1.2A SC88
Stock
37,834
In Stock :
37,834

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Power Dissipation-Max :
750mW Ta
REACH SVHC :
No SVHC
Pbfree Code :
yes
Voltage - Rated DC :
-20V
Resistance :
180mOhm
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Package / Case :
6-TSSOP, SC-88, SOT-363
Turn-Off Delay Time :
16 ns
Fall Time (Typ) :
12 ns
Rise Time :
12ns
Mount :
Surface Mount
Terminal Position :
Dual
Number of Pins :
6
Continuous Drain Current (ID) :
1.2A
Published :
1999
RoHS Status :
ROHS3 Compliant
Length :
2mm
Width :
1.25mm
Series :
PowerTrench®
Current - Continuous Drain (Id) @ 25°C :
1.2A Ta
Height :
1mm
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 4.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
-1.2A
Mounting Type :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Operating Mode :
ENHANCEMENT MODE
Contact Plating :
Tin
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Power Dissipation :
750mW
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
180m Ω @ 1.2A, 4.5V
Vgs (Max) :
±8V
Threshold Voltage :
900mV
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 10V
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
-20V
Turn On Delay Time :
7 ns
FET Type :
P-Channel
Factory Lead Time :
10 Weeks
Drain to Source Voltage (Vdss) :
20V
Gate to Source Voltage (Vgs) :
8V
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Number of Terminations :
6
Transistor Application :
SWITCHING
Weight :
28mg
Element Configuration :
Single
Terminal Form :
Gull wing
JESD-609 Code :
e3
Introducing Transistors - FETs, MOSFETs - Single onsemi FDG312P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Pins:6, Mounting Type:Surface Mount, Number of Terminations:6, FDG312P pinout, FDG312P datasheet PDF, FDG312P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDG312P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDG312P


P-Channel Tape & Reel (TR) 180m Ω @ 1.2A, 4.5V ±8V 330pF @ 10V 5nC @ 4.5V 20V 6-TSSOP, SC-88, SOT-363

FDG312P Description


This P-Channel MOSFET is made with ON Semiconductor's innovative PowerTrench process, which is specifically designed to reduce on-state resistance while maintaining low gate charge for enhanced switching performance. These devices are well-suited for use in portable electronics.



FDG312P Features


  • Low gate charge (3.3 nC typical).

  • High performance trench technology for extremely low RDS(ON).

  • Compact industry standard SC70-6 surface mount package.



FDG312P Applications


  • Load switch

  • Battery protection

  • Power management


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