FDG312P
- Mfr.Part #
- FDG312P
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.2A SC88
- Stock
- 37,834
- In Stock :
- 37,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Current Rating :
- -1.2A
- Length :
- 2mm
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 10 Weeks
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Power Dissipation-Max :
- 750mW Ta
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- Gate to Source Voltage (Vgs) :
- 8V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±8V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 7 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 330pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 1.2A, 4.5V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -20V
- Rise Time :
- 12ns
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Number of Terminations :
- 6
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Weight :
- 28mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Published :
- 1999
- Terminal Position :
- Dual
- Width :
- 1.25mm
- Power Dissipation :
- 750mW
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- -20V
- Threshold Voltage :
- 900mV
- Contact Plating :
- Tin
- Drain to Source Voltage (Vdss) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 1.2A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- FET Type :
- P-Channel
- Height :
- 1mm
- Fall Time (Typ) :
- 12 ns
- Resistance :
- 180mOhm
- Turn-Off Delay Time :
- 16 ns
- Continuous Drain Current (ID) :
- 1.2A
- Datasheets
- FDG312P
FDG312P Documents

P-Channel Tape & Reel (TR) 180m Ω @ 1.2A, 4.5V ±8V 330pF @ 10V 5nC @ 4.5V 20V 6-TSSOP, SC-88, SOT-363
FDG312P Description
This P-Channel MOSFET is made with ON Semiconductor's innovative PowerTrench process, which is specifically designed to reduce on-state resistance while maintaining low gate charge for enhanced switching performance. These devices are well-suited for use in portable electronics.
FDG312P Features
-
Low gate charge (3.3 nC typical).
-
High performance trench technology for extremely low RDS(ON).
-
Compact industry standard SC70-6 surface mount package.
FDG312P Applications
-
Load switch
-
Battery protection
-
Power management
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