FDG312P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation-Max :

750mW Ta

REACH SVHC :

No SVHC

Pbfree Code :

yes

Voltage - Rated DC :

-20V

Resistance :

180mOhm

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Turn-Off Delay Time :

16 ns

Fall Time (Typ) :

12 ns

Rise Time :

12ns

Mount :

Surface Mount

Terminal Position :

Dual

Number of Pins :

6

Continuous Drain Current (ID) :

1.2A

Published :

1999

RoHS Status :

ROHS3 Compliant

Length :

2mm

Width :

1.25mm

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Height :

1mm

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-1.2A

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation :

750mW

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.2A, 4.5V

Vgs (Max) :

±8V

Threshold Voltage :

900mV

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

7 ns

FET Type :

P-Channel

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

8V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Terminations :

6

Transistor Application :

SWITCHING

Weight :

28mg

Element Configuration :

Single

Terminal Form :

Gull wing

JESD-609 Code :

e3