FDG327N
- Mfr.Part #
- FDG327N
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- N-CHANNEL POWERTRENCH MOSFET, 20
- Stock
- 34,255
- In Stock :
- 34,255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 423pF @ 10V
- Nominal Vgs :
- 700 mV
- Series :
- PowerTrench®
- Number of Elements :
- 1
- Number of Terminations :
- 6
- Turn On Delay Time :
- 6 ns
- Voltage - Rated DC :
- 20V
- Threshold Voltage :
- 700mV
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 14 ns
- Height :
- 1mm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 6.5 ns
- Power Dissipation :
- 420mW
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Resistance :
- 90mOhm
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 1.5A
- Transistor Application :
- SWITCHING
- Number of Pins :
- 6
- Rise Time :
- 6.5ns
- Power Dissipation-Max :
- 420mW Ta
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 1.5A, 4.5V
- Weight :
- 28mg
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Vgs (Max) :
- ±8V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Min Breakdown Voltage :
- 20V
- Drain to Source Breakdown Voltage :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.3nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Width :
- 1.25mm
- JESD-609 Code :
- e3
- Current Rating :
- 1.5A
- Length :
- 2mm
- Published :
- 2017
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 10 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Position :
- Dual
- Datasheets
- FDG327N
FDG327N Documents

N-Channel Tape & Reel (TR) 90m Ω @ 1.5A, 4.5V ±8V 423pF @ 10V 6.3nC @ 4.5V 6-TSSOP, SC-88, SOT-363
FDG327N Description
The FDG327N is a 20V N-Channel PowerTrench MOSFET.
FDG327N Features
-
1.5A 20V. RDS(ON) = 90 mΩ@VGS=4.5 V.
RDS(ON)=100mΩ@VGS=25 V
RDS(ON) = 140 mΩ @VGS= 1.8V
-
Fast switching speed
-
Low gate charge (4.5 nC typical)
-
High-performance trench technology for extremely
-
low RDS(ON)
-
High power and current handling capability.
FDG327N Applications
-
DC/DC converter
-
Power management
-
Load switch
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