FDG327N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 4.5V

Power Dissipation-Max :

420mW Ta

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

1

Threshold Voltage :

700mV

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Voltage - Rated DC :

20V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Fall Time (Typ) :

6.5 ns

Factory Lead Time :

10 Weeks

Min Breakdown Voltage :

20V

Resistance :

90mOhm

Mount :

Surface Mount

Lead Free :

Lead Free

Rise Time :

6.5ns

Height :

1mm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Terminal Position :

Dual

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Width :

1.25mm

Length :

2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

90m Ω @ 1.5A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Continuous Drain Current (ID) :

1.5A

Weight :

28mg

Number of Pins :

6

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Number of Terminations :

6

Turn On Delay Time :

6 ns

Current Rating :

1.5A

Turn-Off Delay Time :

14 ns

Nominal Vgs :

700 mV

Input Capacitance (Ciss) (Max) @ Vds :

423pF @ 10V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±8V

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

420mW

Drain to Source Breakdown Voltage :

20V

Published :

2017

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260