FDG316P
- Mfr.Part #
- FDG316P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 16,205
- In Stock :
- 16,205
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Fall Time (Typ) :
- 9 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2mm
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 1.6A, 10V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 10 Weeks
- FET Type :
- P-Channel
- Element Configuration :
- Single
- Published :
- 2000
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn On Delay Time :
- 8 ns
- Transistor Element Material :
- SILICON
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Resistance :
- 190mOhm
- Rise Time :
- 9ns
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Height :
- 1mm
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Pbfree Code :
- yes
- Weight :
- 28mg
- Vgs (Max) :
- ±20V
- Series :
- PowerTrench®
- Voltage - Rated DC :
- 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Threshold Voltage :
- -1.6V
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 750mW
- Drain to Source Breakdown Voltage :
- -30V
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 165pF @ 15V
- Power Dissipation-Max :
- 750mW Ta
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 1.6A
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 14 ns
- Number of Pins :
- 6
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 1.6A
- Number of Terminations :
- 6
- Width :
- 1.25mm
- Datasheets
- FDG316P

P-Channel Tape & Reel (TR) 190m Ω @ 1.6A, 10V ±20V 165pF @ 15V 5nC @ 10V 6-TSSOP, SC-88, SOT-363
FDG316P Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDG316P Features
-1.6 A, -30 V. RDS(ON) = 0.19 ? @ VGS = -10 V
RDS(ON) = 0.30 ? @ VGS = -4.5 V.
Low gate charge (3.5nC typical).
High performance trench technology for extremely low
RDS(ON).
Compact industry standard SC70-6 surface mount
package.
FDG316P Applications
DC/DC converter
Load switch
Power Management
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