FDC6320C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Weight :

36mg

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Published :

1997

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

220mA 120mA

Continuous Drain Current (ID) :

220mA

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Lead Free :

Lead Free

Max Power Dissipation :

700mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Number of Elements :

2

Turn-Off Delay Time :

7.4 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Drain to Source Breakdown Voltage :

25V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

6 ns

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

850mV

FET Type :

N and P-Channel

Rise Time :

6ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Finish :

Tin (Sn)

FET Feature :

Logic Level Gate

Power Dissipation :

900mW

Radiation Hardening :

No

Terminal Form :

Gull wing

Current Rating :

220mA

Resistance :

4Ohm

Nominal Vgs :

850 mV

Factory Lead Time :

10 Weeks

Number of Pins :

6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Dual Supply Voltage :

25V

Gate to Source Voltage (Vgs) :

8V

Additional Feature :

LOGIC LEVEL COMPATIBLE