FDC6306P

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Mfr.Part #
FDC6306P
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET 2P-CH 20V 1.9A SSOT6
Stock
53,670
In Stock :
53,670

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Voltage - Rated DC :
-20V
Element Configuration :
Dual
Continuous Drain Current (ID) :
1.9A
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
441pF @ 10V
Current Rating :
-1.9A
FET Feature :
Logic Level Gate
RoHS Status :
ROHS3 Compliant
Power - Max :
700mW
ECCN Code :
EAR99
Height :
1mm
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
960mW
Threshold Voltage :
-900mV
Series :
PowerTrench®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
9 ns
FET Type :
2 P-Channel (Dual)
Number of Terminations :
6
Max Power Dissipation :
960mW
Drain to Source Voltage (Vdss) :
20V
Number of Pins :
6
JESD-609 Code :
e3
Rise Time :
9ns
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Turn On Delay Time :
6 ns
Length :
3mm
Pbfree Code :
yes
Factory Lead Time :
10 Weeks
Transistor Element Material :
SILICON
Nominal Vgs :
-900 mV
Resistance :
170mOhm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.2nC @ 4.5V
Lead Free :
Lead Free
Weight :
36mg
Contact Plating :
Tin
Radiation Hardening :
No
Width :
1.7mm
Drain to Source Breakdown Voltage :
-20V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Published :
1999
Number of Elements :
2
Gate to Source Voltage (Vgs) :
8V
Rds On (Max) @ Id, Vgs :
170m Ω @ 1.9A, 4.5V
Mount :
Surface Mount
REACH SVHC :
No SVHC
Turn-Off Delay Time :
14 ns
Dual Supply Voltage :
-20V
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Datasheets
FDC6306P
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDC6306P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Number of Pins:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, FDC6306P pinout, FDC6306P datasheet PDF, FDC6306P amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDC6306P ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC6306P


FDC6306P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDC6306P    Description


  These P-channel 2.5V MOSFET are manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.


FDC6306P    Features

 

-1.9 A, -20 V

RDS(on) = 0.170 |? @ VGS = -4.5 V

RDS(on) = 0.250 |? @ VGS = -2.5 V

Low gate charge (2.3nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)


FDC6306P        Applications


This product is general usage and suitable for many different applications.

 

 





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