FDC6306P
- Mfr.Part #
- FDC6306P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 1.9A SSOT6
- Stock
- 53,670
- In Stock :
- 53,670
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Voltage - Rated DC :
- -20V
- Element Configuration :
- Dual
- Continuous Drain Current (ID) :
- 1.9A
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 441pF @ 10V
- Current Rating :
- -1.9A
- FET Feature :
- Logic Level Gate
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 700mW
- ECCN Code :
- EAR99
- Height :
- 1mm
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 960mW
- Threshold Voltage :
- -900mV
- Series :
- PowerTrench®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 9 ns
- FET Type :
- 2 P-Channel (Dual)
- Number of Terminations :
- 6
- Max Power Dissipation :
- 960mW
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Pins :
- 6
- JESD-609 Code :
- e3
- Rise Time :
- 9ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn On Delay Time :
- 6 ns
- Length :
- 3mm
- Pbfree Code :
- yes
- Factory Lead Time :
- 10 Weeks
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- -900 mV
- Resistance :
- 170mOhm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 4.2nC @ 4.5V
- Lead Free :
- Lead Free
- Weight :
- 36mg
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Width :
- 1.7mm
- Drain to Source Breakdown Voltage :
- -20V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Published :
- 1999
- Number of Elements :
- 2
- Gate to Source Voltage (Vgs) :
- 8V
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 1.9A, 4.5V
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 14 ns
- Dual Supply Voltage :
- -20V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Datasheets
- FDC6306P

FDC6306P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6306P Description
These P-channel 2.5V MOSFET are manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.
FDC6306P Features
-1.9 A, -20 V
RDS(on) = 0.170 |? @ VGS = -4.5 V
RDS(on) = 0.250 |? @ VGS = -2.5 V
Low gate charge (2.3nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
FDC6306P Applications
This product is general usage and suitable for many different applications.
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