FDB5800

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Mfr.Part #
FDB5800
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 14A/80A D2PAK
Stock
28,052
In Stock :
28,052

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Contact Plating :
Tin
Pbfree Code :
yes
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
652 mJ
Operating Temperature :
-55°C~175°C TJ
Series :
PowerTrench®
Radiation Hardening :
No
Height :
4.83mm
Mount :
Surface Mount
Power Dissipation-Max :
242W Tc
Length :
10.67mm
Continuous Drain Current (ID) :
80A
Input Capacitance (Ciss) (Max) @ Vds :
6625pF @ 15V
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
135nC @ 10V
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Number of Terminations :
2
Factory Lead Time :
8 Weeks
Number of Pins :
3
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
60V
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
14A Ta 80A Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Threshold Voltage :
1V
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
20.3 ns
Published :
2017
JESD-609 Code :
e3
Power Dissipation :
242W
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
6m Ω @ 80A, 10V
Rise Time :
22ns
Width :
11.33mm
Turn-Off Delay Time :
27.1 ns
Lifecycle Status :
ACTIVE (Last Updated: 23 hours ago)
FET Type :
N-Channel
Number of Elements :
1
Weight :
1.31247g
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2.5V @ 250μA
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
REACH SVHC :
No SVHC
Resistance :
6mOhm
Fall Time (Typ) :
12.1 ns
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB5800 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FDB5800 pinout, FDB5800 datasheet PDF, FDB5800 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB5800 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB5800


N-Channel Tape & Reel (TR) 6m Ω @ 80A, 10V ±20V 6625pF @ 15V 135nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB5800 Description

The FDB5800 N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDB5800 Features

● RDS(on) = 4.6 mΩ (Typ.), VGS= 10V, lD = 80 A
● High Performance Trench Technology for Extermly Low RDS(on)
● Low Gate Charge
● High Power and Current Handing Capability
● RoHs Compliant
● No SVHC
● Lead Free
FDB5800 Applications

● Power tools
● Motor drives and Uninterruptible Power Supplies
● New Energy Vehicle
● Photovoltaic Generation
● Wind Power Generation
● Smart Grid
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