FDB5800

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

FET Type :

N-Channel

Rise Time :

22ns

Current - Continuous Drain (Id) @ 25°C :

14A Ta 80A Tc

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Radiation Hardening :

No

Published :

2017

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

652 mJ

Number of Elements :

1

Turn On Delay Time :

20.3 ns

Lead Free :

Lead Free

Turn-Off Delay Time :

27.1 ns

Series :

PowerTrench®

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

242W Tc

Weight :

1.31247g

Resistance :

6mOhm

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Height :

4.83mm

Fall Time (Typ) :

12.1 ns

Input Capacitance (Ciss) (Max) @ Vds :

6625pF @ 15V

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Number of Terminations :

2

Width :

11.33mm

Threshold Voltage :

1V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6m Ω @ 80A, 10V

Vgs (Max) :

±20V

Length :

10.67mm

Continuous Drain Current (ID) :

80A

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Power Dissipation :

242W