FDB5800
- Mfr.Part #
- FDB5800
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 14A/80A D2PAK
- Stock
- 28,052
- In Stock :
- 28,052
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 652 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- PowerTrench®
- Radiation Hardening :
- No
- Height :
- 4.83mm
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 242W Tc
- Length :
- 10.67mm
- Continuous Drain Current (ID) :
- 80A
- Input Capacitance (Ciss) (Max) @ Vds :
- 6625pF @ 15V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 135nC @ 10V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 80A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Threshold Voltage :
- 1V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 20.3 ns
- Published :
- 2017
- JESD-609 Code :
- e3
- Power Dissipation :
- 242W
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 80A, 10V
- Rise Time :
- 22ns
- Width :
- 11.33mm
- Turn-Off Delay Time :
- 27.1 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Weight :
- 1.31247g
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Resistance :
- 6mOhm
- Fall Time (Typ) :
- 12.1 ns
- Datasheets
- FDB5800
FDB5800 Documents

N-Channel Tape & Reel (TR) 6m Ω @ 80A, 10V ±20V 6625pF @ 15V 135nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
The FDB5800 N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDB5800 Features
● RDS(on) = 4.6 mΩ (Typ.), VGS= 10V, lD = 80 A
● High Performance Trench Technology for Extermly Low RDS(on)
● Low Gate Charge
● High Power and Current Handing Capability
● RoHs Compliant
● No SVHC
● Lead Free
FDB5800 Applications
● Power tools
● Motor drives and Uninterruptible Power Supplies
● New Energy Vehicle
● Photovoltaic Generation
● Wind Power Generation
● Smart Grid
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