FDB52N20TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation :

357W

Width :

10.16mm

Rise Time :

160ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

UniFET™

Terminal Form :

Gull wing

Voltage - Rated DC :

200V

Number of Channels :

1

Turn On Delay Time :

53 ns

Case Connection :

DRAIN

Contact Plating :

Tin

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

49m Ω @ 26A, 10V

Max Junction Temperature (Tj) :

150°C

Drain to Source Breakdown Voltage :

200V

Pbfree Code :

yes

Weight :

1.31247g

Nominal Vgs :

5 V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Current Rating :

52A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Transistor Element Material :

SILICON

Fall Time (Typ) :

150 ns

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Number of Pins :

3

REACH SVHC :

No SVHC

Turn-Off Delay Time :

48 ns

Vgs (Max) :

±30V

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

208A

FET Type :

N-Channel

Radiation Hardening :

No

Factory Lead Time :

6 Weeks

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Transistor Application :

SWITCHING

Number of Elements :

1

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Resistance :

49mOhm

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

2520 mJ

Length :

9.98mm

Height :

5.08mm

Power Dissipation-Max :

357W Tc

Continuous Drain Current (ID) :

52A

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

5V