FDB5645

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

83A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-65°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

80A Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

COMMERCIAL

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 40A, 10V

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

125W Tc

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Reach Compliance Code :

Unknown

Pin Count :

3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4.468pF @ 30V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

150A

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0095Ohm

Series :

PowerTrench®

Pbfree Code :

yes