FDB52N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

2520 mJ

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

52A

Width :

10.16mm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

5V

Nominal Vgs :

5 V

Power Dissipation :

357W

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

49m Ω @ 26A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Packaging :

Tape and Reel (TR)

Weight :

1.31247g

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Rise Time :

160ns

Power Dissipation-Max :

357W Tc

Turn-Off Delay Time :

48 ns

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Height :

5.08mm

Mount :

Surface Mount

Element Configuration :

Single

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Factory Lead Time :

6 Weeks

Series :

UniFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

52A

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

JESD-609 Code :

e3

Fall Time (Typ) :

150 ns

Transistor Application :

SWITCHING

Pbfree Code :

yes

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

208A

Length :

9.98mm

Number of Channels :

1

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Resistance :

49mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

ECCN Code :

EAR99

Turn On Delay Time :

53 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±30V

Published :

2005

Max Junction Temperature (Tj) :

150°C

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V