FDB3682

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

11.33mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

9 ns

Power Dissipation-Max :

95W Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

55 mJ

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 25V

Fall Time (Typ) :

32 ns

Drain Current-Max (Abs) (ID) :

6A

Number of Pins :

3

Radiation Hardening :

No

Terminal Form :

Gull wing

Turn-Off Delay Time :

26 ns

Height :

4.83mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Resistance :

36mOhm

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Elements :

1

Length :

10.67mm

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

6A Ta 32A Tc

JESD-609 Code :

e3

Case Connection :

DRAIN

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

95W

Pbfree Code :

yes

Continuous Drain Current (ID) :

32A

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Voltage - Rated DC :

100V

Series :

PowerTrench®

Mount :

Surface Mount

FET Type :

N-Channel

Current Rating :

32A

Factory Lead Time :

8 Weeks

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Rise Time :

46ns

Weight :

1.31247g

Rds On (Max) @ Id, Vgs :

36m Ω @ 32A, 10V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

RoHS Status :

ROHS3 Compliant