FDB3632

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Width :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Voltage - Rated DC :

100V

Rise Time :

39ns

Turn On Delay Time :

30 ns

Termination :

SMD/SMT

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

12A Ta 80A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Contact Plating :

Tin

Number of Terminations :

2

Pbfree Code :

yes

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Mount :

Surface Mount

Fall Time (Typ) :

46 ns

Height :

5.08mm

Current Rating :

44A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

310W Tc

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

80A

Element Configuration :

Single

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

9m Ω @ 80A, 10V

Power Dissipation :

310W

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Series :

PowerTrench®

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Junction Temperature (Tj) :

175°C

Length :

10.67mm

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Number of Pins :

3

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Resistance :

9mOhm

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Dual Supply Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Weight :

1.31247g

Turn-Off Delay Time :

96 ns

Transistor Application :

SWITCHING

Nominal Vgs :

4 V

Mounting Type :

Surface Mount