FDB3632

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

5.08mm

Max Junction Temperature (Tj) :

175°C

Rds On (Max) @ Id, Vgs :

9m Ω @ 80A, 10V

Threshold Voltage :

4V

Length :

10.67mm

Case Connection :

DRAIN

Turn-Off Delay Time :

96 ns

Power Dissipation-Max :

310W Tc

Mounting Type :

Surface Mount

Weight :

1.31247g

Resistance :

9mOhm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Vgs (Max) :

±20V

Series :

PowerTrench®

ECCN Code :

EAR99

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Dual Supply Voltage :

100V

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Continuous Drain Current (ID) :

80A

Lead Free :

Lead Free

Published :

2013

Number of Pins :

3

Nominal Vgs :

4 V

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Pbfree Code :

yes

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

12A Ta 80A Tc

REACH SVHC :

No SVHC

Current Rating :

44A

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Voltage - Rated DC :

100V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

310W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Channels :

1

Rise Time :

39ns

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Contact Plating :

Tin

Turn On Delay Time :

30 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

46 ns

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Number of Terminations :

2

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-609 Code :

e3

Width :

9.65mm