FDB3672
- Mfr.Part #
- FDB3672
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.2A/44A TO263
- Stock
- 34,980
- In Stock :
- 34,980
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Series :
- PowerTrench®
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.71pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Ta 44A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Surface Mount :
- yes
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 120W Tc
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 100V
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 44A, 10V
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.028Ohm
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 7.2A
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDB3672

N-Channel Tape & Reel (TR) 28m Ω @ 44A, 10V ±20V 1.71pF @ 25V 31nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB3672 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.71pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [7.2A] according to its drain current.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
FDB3672 Features
the avalanche energy rating (Eas) is 120 mJ
a 100V drain to source voltage (Vdss)
FDB3672 Applications
There are a lot of Rochester Electronics, LLC
FDB3672 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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