FDB3672

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Mfr.Part #
FDB3672
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 7.2A/44A TO263
Stock
34,980
In Stock :
34,980

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
260
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Terminal Finish :
MATTE TIN
Number of Elements :
1
Series :
PowerTrench®
Number of Terminations :
2
Drain to Source Voltage (Vdss) :
100V
Input Capacitance (Ciss) (Max) @ Vds :
1.71pF @ 25V
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
7.2A Ta 44A Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Avalanche Energy Rating (Eas) :
120 mJ
Surface Mount :
yes
Qualification Status :
COMMERCIAL
Transistor Element Material :
SILICON
Power Dissipation-Max :
120W Tc
Terminal Position :
Single
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±20V
Pin Count :
4
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
100V
Rds On (Max) @ Id, Vgs :
28m Ω @ 44A, 10V
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.028Ohm
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
7.2A
Pbfree Code :
yes
Operating Temperature :
-55°C~175°C TJ
JESD-30 Code :
R-PSSO-G2
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDB3672
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB3672 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, FDB3672 pinout, FDB3672 datasheet PDF, FDB3672 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB3672 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB3672


N-Channel Tape & Reel (TR) 28m Ω @ 44A, 10V ±20V 1.71pF @ 25V 31nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB3672 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.71pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [7.2A] according to its drain current.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).

FDB3672 Features


the avalanche energy rating (Eas) is 120 mJ
a 100V drain to source voltage (Vdss)


FDB3672 Applications


There are a lot of Rochester Electronics, LLC
FDB3672 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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