FDB33N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

250V

Number of Terminations :

2

Element Configuration :

Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Power Dissipation-Max :

235W Tc

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Mount :

Surface Mount

Power Dissipation :

235W

Factory Lead Time :

7 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

33A

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Fall Time (Typ) :

120 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

94m Ω @ 16.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

UniFET™

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Rise Time :

230ns

Turn On Delay Time :

35 ns

ECCN Code :

EAR99

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Published :

2004

Turn-Off Delay Time :

75 ns

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2135pF @ 25V

Pbfree Code :

yes

Number of Pins :

3

Weight :

1.31247g

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Nominal Vgs :

3 V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

JESD-609 Code :

e3

Height :

4.83mm

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Length :

10.67mm

Width :

11.33mm

Resistance :

94mOhm