FDB082N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Number of Elements :

1

Rise Time :

58ns

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

542 mJ

Continuous Drain Current (ID) :

105A

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 75A, 10V

Power Dissipation :

231W

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Width :

9.65mm

Turn On Delay Time :

22 ns

Pulsed Drain Current-Max (IDM) :

420A

Number of Terminations :

2

Turn-Off Delay Time :

61 ns

Drain to Source Breakdown Voltage :

150V

Lead Free :

Lead Free

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

6040pF @ 25V

Terminal Form :

Gull wing

Number of Pins :

3

Height :

4.83mm

Transistor Element Material :

SILICON

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation-Max :

294W Tc

Weight :

1.31247g

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.67mm

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

117A Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Radiation Hardening :

No

ECCN Code :

EAR99

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

26 ns

FET Type :

N-Channel

Factory Lead Time :

8 Weeks

Mount :

Surface Mount

Resistance :

8.2mOhm

Gate to Source Voltage (Vgs) :

20V