FDB016N04AL7
- Mfr.Part #
- FDB016N04AL7
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 30,683
- In Stock :
- 30,683
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Height :
- 4.7mm
- Published :
- 2014
- Turn-Off Delay Time :
- 118 ns
- Length :
- 10.2mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time :
- 16 Weeks
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 40V
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 167nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Weight :
- 1.312g
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 160A
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 21 ns
- Power Dissipation :
- 283W
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 11600pF @ 25V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 33 ns
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 80A, 10V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-30 Code :
- R-PSSO-G6
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 283W Tc
- Number of Pins :
- 7
- Width :
- 9.4mm
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Rise Time :
- 14ns
- Datasheets
- FDB016N04AL7

N-Channel Tape & Reel (TR) 1.6m Ω @ 80A, 10V ±20V 11600pF @ 25V 167nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
FDB016N04AL7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 11600pF @ 25V.This device has a continuous drain current (ID) of [160A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 118 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
FDB016N04AL7 Features
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 118 ns
FDB016N04AL7 Applications
There are a lot of ON Semiconductor
FDB016N04AL7 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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