FDB024N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Length :

10.67mm

Vgs (Max) :

±20V

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Threshold Voltage :

3.5V

Radiation Hardening :

No

Height :

4.83mm

Fall Time (Typ) :

250 ns

ECCN Code :

EAR99

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Rise Time :

324ns

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mounting Type :

Surface Mount

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 75A, 10V

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

348 ns

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drain to Source Breakdown Voltage :

60V

Resistance :

2.4MOhm

Weight :

1.762g

Power Dissipation :

395W

Power Dissipation-Max :

395W Tc

Input Capacitance (Ciss) (Max) @ Vds :

14885pF @ 25V

Terminal Finish :

Tin (Sn)

Published :

2013

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

9.65mm

REACH SVHC :

No SVHC

Number of Pins :

3

FET Type :

N-Channel

Turn On Delay Time :

134 ns

Continuous Drain Current (ID) :

265A

Gate Charge (Qg) (Max) @ Vgs :

226nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Lead Free :

Lead Free

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant