FDB024N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

395W Tc

Fall Time (Typ) :

250 ns

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Resistance :

2.4MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 75A, 10V

Number of Elements :

1

Series :

PowerTrench®

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

60V

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Mount :

Surface Mount

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-609 Code :

e3

Element Configuration :

Single

Published :

2013

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Length :

10.67mm

Weight :

1.762g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

265A

Threshold Voltage :

3.5V

Height :

4.83mm

FET Type :

N-Channel

Turn On Delay Time :

134 ns

Power Dissipation :

395W

Vgs (Max) :

±20V

Case Connection :

DRAIN

Radiation Hardening :

No

Turn-Off Delay Time :

348 ns

Width :

9.65mm

Gate Charge (Qg) (Max) @ Vgs :

226nC @ 10V

Rise Time :

324ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

14885pF @ 25V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON