FDB024N08BL7
- Mfr.Part #
- FDB024N08BL7
- Manufacturer
- onsemi
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 120A TO263-7
- Stock
- 13,293
- In Stock :
- 13,293
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 6
- DS Breakdown Voltage-Min :
- 80V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 41 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13530pF @ 40V
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- JESD-30 Code :
- R-PSSO-G6
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-263CB
- Mount :
- Surface Mount
- Weight :
- 1.312g
- Width :
- 9.4mm
- Height :
- 4.7mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 66ns
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Operating Temperature :
- -55°C~175°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Turn-Off Delay Time :
- 87 ns
- Element Configuration :
- Single
- Published :
- 2014
- Drain to Source Voltage (Vdss) :
- 80V
- Number of Pins :
- 7
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 229A
- Turn On Delay Time :
- 47 ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Power Dissipation :
- 246W
- FET Type :
- N-Channel
- Length :
- 10.2mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 100A, 10V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 178nC @ 10V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 246W Tc
- Peak Reflow Temperature (Cel) :
- 245
- Series :
- PowerTrench®
- Datasheets
- FDB024N08BL7
FDB024N08BL7 Documents

N-Channel Tape & Reel (TR) 2.4m Ω @ 100A, 10V ±20V 13530pF @ 40V 178nC @ 10V 80V TO-263-7, D2Pak (6 Leads + Tab)
FDB024N08BL7 Description
FDB024N08BL7 is an N-channel MOSFET from the manufacturer of ON Semiconductor with a voltage of 80V. The operating temperature of FDB024N08BL7 is -55°C~175°C TJ and its maximum power dissipation are 246W. It is available in TO-263-7, D2Pak (6 Leads + Tab) packaging way. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDB024N08BL7 Features
-
RDS(on) = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A
-
Low FOM RDS(on) *QG
-
Low reverse recovery charge, Qrr
-
Soft reverse recovery body diode
-
Enables highly efficiency in synchronous rectification
-
Fast Switching Speed
-
RoHS Compliant
-
Qualified according to JEDEC Standards JESD22-A113F IPC/JEDEC J-STD-020D.1
FDB024N08BL7 Applications
-
AC-DC Merchant Power Supply
-
AC-DC Merchant Power Supply - Servers & Workstations
-
AC-DC Merchant Power Supply - Desktop PC
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Electric Bike
-
Other Data Processing
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