FDB024N08BL7

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Mfr.Part #
FDB024N08BL7
Manufacturer
onsemi
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Datasheet
Download
Description
MOSFET N-CH 80V 120A TO263-7
Stock
13,293
In Stock :
13,293

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Terminal Form :
Gull wing
Case Connection :
DRAIN
Fall Time (Typ) :
41 ns
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs :
178nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
7
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
13530pF @ 40V
Height :
4.7mm
Turn-Off Delay Time :
87 ns
Drain-source On Resistance-Max :
0.0024Ohm
Width :
9.4mm
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
229A
Published :
2014
Rise Time :
66ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Number of Terminations :
6
JEDEC-95 Code :
TO-263CB
Power Dissipation-Max :
246W Tc
Operating Mode :
ENHANCEMENT MODE
Weight :
1.312g
Number of Elements :
1
Vgs(th) (Max) @ Id :
4.5V @ 250μA
FET Type :
N-Channel
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab)
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
245
DS Breakdown Voltage-Min :
80V
Turn On Delay Time :
47 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G6
Series :
PowerTrench®
Drain to Source Voltage (Vdss) :
80V
Mount :
Surface Mount
Power Dissipation :
246W
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Radiation Hardening :
No
Transistor Application :
SWITCHING
Length :
10.2mm
Factory Lead Time :
16 Weeks
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB024N08BL7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:7, Number of Terminations:6, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), FDB024N08BL7 pinout, FDB024N08BL7 datasheet PDF, FDB024N08BL7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB024N08BL7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB024N08BL7


N-Channel Tape & Reel (TR) 2.4m Ω @ 100A, 10V ±20V 13530pF @ 40V 178nC @ 10V 80V TO-263-7, D2Pak (6 Leads + Tab)

FDB024N08BL7 Description


FDB024N08BL7 is an N-channel MOSFET from the manufacturer of ON Semiconductor with a voltage of 80V. The operating temperature of FDB024N08BL7 is -55°C~175°C TJ and its maximum power dissipation are 246W. It is available in TO-263-7, D2Pak (6 Leads + Tab) packaging way. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.



FDB024N08BL7 Features


  • RDS(on) = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A

  • Low FOM RDS(on) *QG

  • Low reverse recovery charge, Qrr

  • Soft reverse recovery body diode

  • Enables highly efficiency in synchronous rectification

  • Fast Switching Speed

  • RoHS Compliant

  • Qualified according to JEDEC Standards JESD22-A113F IPC/JEDEC J-STD-020D.1



FDB024N08BL7 Applications


  • AC-DC Merchant Power Supply

  • AC-DC Merchant Power Supply - Servers & Workstations

  • AC-DC Merchant Power Supply - Desktop PC

  • Electric Bike

  • Other Data Processing


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