FDB0260N1007L

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Mfr.Part #
FDB0260N1007L
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Datasheet
Download
Description
MOSFET N-CH 100V 200A TO263-7
Stock
2,459
In Stock :
2,459

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab)
Input Capacitance (Ciss) (Max) @ Vds :
8545pF @ 50V
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
100V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
7
Series :
PowerTrench®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
16 Weeks
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
2.6m Ω @ 27A, 10V
Packaging :
Tape and Reel (TR)
Threshold Voltage :
2.8V
Reach Compliance Code :
not_compliant
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
200A
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
HTS Code :
8541.29.00.95
Gate Charge (Qg) (Max) @ Vgs :
118nC @ 10V
Weight :
1.312g
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Power Dissipation-Max :
3.8W Ta 250W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Mount :
Surface Mount
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDB0260N1007L from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-7, D2Pak (6 Leads + Tab), Number of Pins:7, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, FDB0260N1007L pinout, FDB0260N1007L datasheet PDF, FDB0260N1007L amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDB0260N1007L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDB0260N1007L


N-Channel Tape & Reel (TR) 2.6m Ω @ 27A, 10V ±20V 8545pF @ 50V 118nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab)

FDB0260N1007L MOSFET Description


The FDB0260N1007L N-Channel MOSFET is of high performance and current handling capability. It can do fast switching for load-switch devices. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.



FDB0260N1007L MOSFET Features


RoHS Compliant

High-Performance Trench Technology for Extremely Low RDS(on)

Fast Switching Speed

High Power and Current Handling Capability

Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A

Low Gate Charge



FDB0260N1007L MOSFET Applications


Battery Protection

Industrial Automation

Uninterruptible Power Supplies

Industrial Power Supplies

Industrial Motor Drive

Energy Inverters

Load Switch

Energy Storage


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