FDB0260N1007L
- Mfr.Part #
- FDB0260N1007L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 200A TO263-7
- Stock
- 2,459
- In Stock :
- 2,459
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Input Capacitance (Ciss) (Max) @ Vds :
- 8545pF @ 50V
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 7
- Series :
- PowerTrench®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 27A, 10V
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 2.8V
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 200A
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- HTS Code :
- 8541.29.00.95
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Weight :
- 1.312g
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Power Dissipation-Max :
- 3.8W Ta 250W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Datasheets
- FDB0260N1007L
FDB0260N1007L Documents

N-Channel Tape & Reel (TR) 2.6m Ω @ 27A, 10V ±20V 8545pF @ 50V 118nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab)
FDB0260N1007L MOSFET Description
The FDB0260N1007L N-Channel MOSFET is of high performance and current handling capability. It can do fast switching for load-switch devices. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
FDB0260N1007L MOSFET Features
RoHS Compliant
High-Performance Trench Technology for Extremely Low RDS(on)
Fast Switching Speed
High Power and Current Handling Capability
Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A
Low Gate Charge
FDB0260N1007L MOSFET Applications
Battery Protection
Industrial Automation
Uninterruptible Power Supplies
Industrial Power Supplies
Industrial Motor Drive
Energy Inverters
Load Switch
Energy Storage
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