FDB075N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Series :

PowerTrench®

Pulsed Drain Current-Max (IDM) :

522A

Fall Time (Typ) :

21 ns

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Length :

10.67mm

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Terminal Form :

Gull wing

Additional Feature :

ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Continuous Drain Current (ID) :

130A

Input Capacitance (Ciss) (Max) @ Vds :

7350pF @ 75V

Published :

2013

Pbfree Code :

yes

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 100A, 10V

Power Dissipation :

333W

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

37ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

150V

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Contact Plating :

Tin

Height :

4.83mm

Drain-source On Resistance-Max :

0.0075Ohm

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

FET Type :

N-Channel

Weight :

1.31247g

Width :

9.65mm

Vgs (Max) :

±20V

Turn-Off Delay Time :

62 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

588 mJ

Power Dissipation-Max :

333W Tc

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Elements :

1

Turn On Delay Time :

28 ns

Number of Terminations :

2