FDB070AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

175W Tc

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

FET Type :

N-Channel

JESD-609 Code :

e3

Height :

4.83mm

Terminal Form :

Gull wing

Current Rating :

80A

Pbfree Code :

yes

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

7m Ω @ 80A, 10V

Resistance :

7mOhm

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

12 ns

Weight :

1.31247g

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.67mm

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Number of Elements :

1

Mount :

Surface Mount

Series :

PowerTrench®

Termination :

SMD/SMT

Nominal Vgs :

4 V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

60V

Turn-Off Delay Time :

27 ns

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Pins :

3

Power Dissipation :

175W

Fall Time (Typ) :

35 ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Mounting Type :

Surface Mount

Width :

11.33mm

Voltage - Rated DC :

60V

Current - Continuous Drain (Id) @ 25°C :

15A Ta 80A Tc

Threshold Voltage :

4V

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Rise Time :

159ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V