FDB047N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Element Configuration :

Single

Number of Terminations :

2

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Published :

2012

Vgs(th) (Max) @ Id :

4.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Weight :

1.762g

Length :

10.67mm

Turn-Off Delay Time :

344 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Turn On Delay Time :

174 ns

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

375W Tc

Packaging :

Tape and Reel (TR)

Resistance :

4.7MOhm

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

JESD-609 Code :

e3

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Power Dissipation :

375W

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Continuous Drain Current (ID) :

120A

Height :

4.83mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

15265pF @ 25V

Fall Time (Typ) :

244 ns

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

656A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 75A, 10V

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Rise Time :

386ns

Width :

11.33mm

Threshold Voltage :

3.5V

Nominal Vgs :

3.5 V