FDB047N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

15265pF @ 25V

REACH SVHC :

No SVHC

Threshold Voltage :

3.5V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Factory Lead Time :

8 Weeks

Number of Terminations :

2

Radiation Hardening :

No

Element Configuration :

Single

Mount :

Surface Mount

Power Dissipation :

375W

Fall Time (Typ) :

244 ns

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Height :

4.83mm

Length :

10.67mm

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

PowerTrench®

Pulsed Drain Current-Max (IDM) :

656A

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 75A, 10V

Published :

2012

Width :

11.33mm

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Nominal Vgs :

3.5 V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

FET Type :

N-Channel

Turn On Delay Time :

174 ns

Continuous Drain Current (ID) :

120A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Resistance :

4.7MOhm

Power Dissipation-Max :

375W Tc

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Rise Time :

386ns

Number of Pins :

3

Weight :

1.762g

Turn-Off Delay Time :

344 ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)