FDB047N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.83mm

Series :

PowerTrench®

Rise Time :

386ns

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nominal Vgs :

3.5 V

Case Connection :

DRAIN

Turn On Delay Time :

174 ns

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

656A

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 75A, 10V

Threshold Voltage :

3.5V

Continuous Drain Current (ID) :

120A

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2

Weight :

1.762g

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Length :

10.67mm

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

15265pF @ 25V

Width :

11.33mm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

375W

Resistance :

4.7MOhm

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Element Configuration :

Single

Published :

2012

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Fall Time (Typ) :

244 ns

Radiation Hardening :

No

Turn-Off Delay Time :

344 ns

Terminal Form :

Gull wing

Number of Terminations :

2

Power Dissipation-Max :

375W Tc

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Number of Pins :

3