FDB045AN08A0-F085
- Mfr.Part #
- FDB045AN08A0-F085
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 19A TO263AB
- Stock
- 23,603
- In Stock :
- 23,603
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 75V
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Continuous Drain Current (ID) :
- 80A
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 80A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 88ns
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Weight :
- 1.31247g
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Pbfree Code :
- yes
- Turn On Delay Time :
- 18 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 45 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 138nC @ 10V
- Published :
- 2013
- Packaging :
- Cut Tape (CT)
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 40 ns
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 310W
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Power Dissipation-Max :
- 310W Tc
- Drain-source On Resistance-Max :
- 0.0045ohm
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDB045AN08A0-F085

N-Channel Cut Tape (CT) 4.5m Ω @ 80A, 10V ±20V 6600pF @ 25V 138nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB045AN08A0-F085 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
FDB045AN08A0-F085 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 40 ns
FDB045AN08A0-F085 Applications
There are a lot of ON Semiconductor
FDB045AN08A0-F085 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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