FDB045AN08A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

310W Tc

Rise Time :

88ns

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 80A, 10V

Contact Plating :

Tin

Voltage - Rated DC :

75V

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

600 mJ

Length :

10.67mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

75V

Fall Time (Typ) :

45 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

not_compliant

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Height :

4.83mm

Power Dissipation :

310W

Turn On Delay Time :

18 ns

Pbfree Code :

yes

Weight :

1.31247g

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2001

Current Rating :

19A

Series :

PowerTrench®

Turn-Off Delay Time :

40 ns

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

19A Ta 90A Tc

Width :

11.33mm

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Qualification Status :

Not Qualified

Mount :

Surface Mount

ECCN Code :

EAR99

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

FET Type :

N-Channel

Factory Lead Time :

11 Weeks

Lead Free :

Lead Free

Continuous Drain Current (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Form :

Gull wing

Resistance :

4.5mOhm