FDB035N10A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Width :

9.65mm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Vgs (Max) :

±20V

Element Configuration :

Single

Continuous Drain Current (ID) :

214A

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Transistor Application :

SWITCHING

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation-Max :

333W Tc

Turn-Off Delay Time :

37 ns

Turn On Delay Time :

22 ns

Resistance :

3.5mOhm

Avalanche Energy Rating (Eas) :

558 mJ

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

333W

Weight :

1.31247g

Series :

PowerTrench®

Number of Pins :

3

Terminal Form :

Gull wing

Case Connection :

DRAIN

Lead Free :

Lead Free

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 75A, 10V

Published :

2013

Fall Time (Typ) :

11 ns

Length :

10.67mm

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

704A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Height :

4.83mm

Rise Time :

54ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JESD-609 Code :

e3