EMY1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mounting Type :

Surface Mount

Published :

2004

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

60V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

10

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Max Power Dissipation :

150mW

Gain Bandwidth Product :

180MHz

Base Part Number :

*MY1

Pin Count :

5

ECCN Code :

EAR99

Transistor Type :

NPN, PNP (Emitter Coupled)

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

Max Breakdown Voltage :

50V

hFE Min :

120

JESD-30 Code :

R-PDSO-F5

Current Rating :

150mA

Transition Frequency :

180MHz

Pbfree Code :

yes

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

Polarity :

NPN, PNP

HTS Code :

8541.21.00.75

Element Configuration :

Dual

Frequency - Transition :

180MHz 140MHz

Max Collector Current :

150mA

Collector Base Voltage (VCBO) :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Number of Pins :

6

Terminal Finish :

Tin/Copper (Sn/Cu)

Emitter Base Voltage (VEBO) :

6V

Transistor Element Material :

SILICON

Number of Elements :

2

Package / Case :

6-SMD (5 Leads), Flat Lead