EMT1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

-500mV

Package / Case :

SOT-563, SOT-666

Current Rating :

-150mA

Gain Bandwidth Product :

140MHz

Power Dissipation :

150mW

Voltage - Rated DC :

-50V

Number of Pins :

6

Operating Temperature :

150°C TJ

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

HTS Code :

8541.21.00.75

Collector Base Voltage (VCBO) :

-60V

Polarity :

PNP

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

6

Transition Frequency :

140MHz

Continuous Collector Current :

-150mA

Collector Emitter Voltage (VCEO) :

500mV

hFE Min :

120

Number of Elements :

2

Terminal Finish :

TIN/TIN COPPER

Terminal Form :

Flat

Base Part Number :

*MT1

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Lead Free :

Lead Free

Published :

2008

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

150mA

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

Max Power Dissipation :

150mW

Factory Lead Time :

13 Weeks

JESD-609 Code :

e3/e2

Emitter Base Voltage (VEBO) :

-6V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA