EMH6T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Terminations :

6

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Collector Emitter Voltage (VCEO) :

300mV

REACH SVHC :

No SVHC

Max Breakdown Voltage :

50V

Max Output Current :

100mA

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.2

Polarity :

NPN

Element Configuration :

Dual

HTS Code :

8541.21.00.75

Number of Elements :

2

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Frequency - Transition :

250MHz

Transition Frequency :

250MHz

Resistor - Emitter Base (R2) :

47k Ω

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Pin Count :

6

Terminal Finish :

TIN/TIN COPPER

Max Power Dissipation :

150mW

hFE Min :

68

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

10

Base Part Number :

*MH6

Continuous Collector Current :

100mA

Resistor - Base (R1) :

47k Ω

JESD-609 Code :

e3/e2

Mount :

Surface Mount

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Operating Supply Voltage :

50V

Published :

2004

Current Rating :

30mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA