EMG5T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Frequency - Transition :

250MHz

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

50V

Base Part Number :

*MG5

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

Tin/Copper (Sn/Cu)

Factory Lead Time :

13 Weeks

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Max Power Dissipation :

150mW

Collector Emitter Breakdown Voltage :

50V

hFE Min :

68

Pbfree Code :

yes

Package / Case :

6-SMD (5 Leads), Flat Lead

Voltage - Rated DC :

50V

Continuous Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Current Rating :

70mA

ECCN Code :

EAR99

Max Output Current :

100mA

Resistor - Emitter Base (R2) :

47k Ω

JESD-609 Code :

e2

Max Breakdown Voltage :

50V

Lead Free :

Lead Free

Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Transition Frequency :

250MHz

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Mounting Type :

Surface Mount

Number of Pins :

5

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Resistor - Base (R1) :

10k Ω

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Pin Count :

5

Published :

2011

Collector Emitter Voltage (VCEO) :

300mV

Number of Elements :

2

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Max Collector Current :

100mA