EMG3T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

Power Dissipation :

150mW

Base Part Number :

*MG3

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Published :

2012

Terminal Form :

Flat

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

50V

Transition Frequency :

250MHz

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

100

Max Breakdown Voltage :

50V

Number of Pins :

5

Max Collector Current :

100mA

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

10

Resistor - Base (R1) :

4.7k Ω

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Factory Lead Time :

13 Weeks

Number of Elements :

2

Package / Case :

SC-75, SOT-416

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

RoHS Status :

ROHS3 Compliant

Pin Count :

5

Frequency - Transition :

250MHz

Pbfree Code :

yes

Number of Terminations :

5

Transistor Type :

2 NPN - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA ICBO

Max Power Dissipation :

150mW

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Min Operating Temperature :

-55°C