EMG11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

250MHz

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Collector Emitter Voltage (VCEO) :

300mV

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47k Ω

Current Rating :

100mA

Published :

2011

Min Operating Temperature :

-50°C

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

ECCN Code :

EAR99

Transition Frequency :

250MHz

Power Dissipation :

150mW

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

JESD-609 Code :

e2

Pin Count :

5

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

2.2k Ω

Number of Pins :

5

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21

Max Collector Current :

100mA

Base Part Number :

*MG11

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

hFE Min :

80

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Elements :

2

Voltage - Rated DC :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Pbfree Code :

yes

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Polarity :

NPN

Terminal Finish :

TIN COPPER

Package / Case :

6-SMD (5 Leads), Flat Lead

Max Power Dissipation :

150mW

Number of Terminations :

5

Mounting Type :

Surface Mount