EMD6T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Element Configuration :

Dual

Radiation Hardening :

No

Terminal Finish :

TIN COPPER

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR

Collector Emitter Voltage (VCEO) :

50V

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

6

JESD-609 Code :

e2

Resistor - Base (R1) :

4.7k Ω

Voltage - Rated DC :

50V

hFE Min :

100

Packaging :

Tape and Reel (TR)

Polarity :

NPN, PNP

Max Breakdown Voltage :

50V

Mount :

Surface Mount

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Frequency - Transition :

250MHz

Pbfree Code :

yes

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Lead Free :

Lead Free

Number of Elements :

2

Published :

2004

Transition Frequency :

250MHz

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Transistor Application :

SWITCHING

Base Part Number :

*MD6

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

6

Max Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

100mA

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260