EMD4T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Terminal Finish :

TIN COPPER

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 300mV @ 250μA, 5mA

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

100mA

Frequency - Transition :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Factory Lead Time :

13 Weeks

Element Configuration :

Dual

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Base Part Number :

*MD4

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN, PNP

Transistor Application :

SWITCHING

Resistor - Base (R1) :

47k Ω, 10k Ω

Published :

2012

Collector Emitter Voltage (VCEO) :

300mV

Max Power Dissipation :

150mW

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Breakdown Voltage :

50V

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Terminations :

6

JESD-609 Code :

e2

Pin Count :

6

Mounting Type :

Surface Mount

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

47k Ω

Pbfree Code :

yes

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

hFE Min :

68

Mount :

Surface Mount

Transition Frequency :

250MHz

Number of Elements :

2

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Copper, Tin