EMD3T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Operating Supply Voltage :

50V

Transistor Application :

SWITCHING

hFE Min :

30

Resistor - Emitter Base (R2) :

10k Ω

Transition Frequency :

250MHz

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Max Collector Current :

100mA

Element Configuration :

Dual

Mounting Type :

Surface Mount

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Number of Terminations :

6

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin/Copper (Sn/Cu)

Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Max Output Current :

100mA

Max Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Number of Elements :

2

Radiation Hardening :

No

Base Part Number :

*MD3

Max Power Dissipation :

150mW

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Package / Case :

SOT-563, SOT-666

Current Rating :

50mA

HTS Code :

8541.21.00.75

Factory Lead Time :

13 Weeks

Frequency - Transition :

250MHz

Resistor - Base (R1) :

10k Ω

Published :

2008

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

300mV

Pbfree Code :

yes

Polarity :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

50V

JESD-609 Code :

e2

Current - Collector Cutoff (Max) :

500nA

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Min Operating Temperature :

-55°C